Diffusion and relaxation of excess carriers in InGaN quantum wells in localized versus extended states
Identifieur interne : 013A86 ( Main/Repository ); précédent : 013A85; suivant : 013A87Diffusion and relaxation of excess carriers in InGaN quantum wells in localized versus extended states
Auteurs : RBID : Pascal:99-0439800Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
We investigate diffusivity of excess carriers in InGaN multiple quantum wells by near-field optical imaging of photoluminescence profiles created with spatially inhomogeneous photoexcitation, complemented by spatially integrated time-resolved measurements. Nominally similar samples display a wide range of behavior in terms of the impact of localized states under moderate (n∼5×1017 cm-3) electron-hole (e-h) injection. By contrast, in the high density regime where present laser diodes operate (n∼1019 cm-3), radiative recombination is dominated by electronic action within the extended states.© 1999 American Institute of Physics.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 014498
Links to Exploration step
Pascal:99-0439800Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Diffusion and relaxation of excess carriers in InGaN quantum wells in localized versus extended states</title><author><name sortKey="Vertikov, A" uniqKey="Vertikov A">A. Vertikov</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Division of Engineering, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Department of Physics and Division of Engineering, Brown University, Providence</wicri:cityArea></affiliation></author><author><name sortKey="Ozden, I" uniqKey="Ozden I">I. Ozden</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Division of Engineering, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Department of Physics and Division of Engineering, Brown University, Providence</wicri:cityArea></affiliation></author><author><name sortKey="Nurmikko, A V" uniqKey="Nurmikko A">A. V. Nurmikko</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Division of Engineering, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Department of Physics and Division of Engineering, Brown University, Providence</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0439800</idno><date when="1999-10-15">1999-10-15</date><idno type="stanalyst">PASCAL 99-0439800 AIP</idno><idno type="RBID">Pascal:99-0439800</idno><idno type="wicri:Area/Main/Corpus">014498</idno><idno type="wicri:Area/Main/Repository">013A86</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Localized states</term><term>Photoluminescence</term><term>Semiconductor quantum wells</term><term>Wide band gap semiconductors</term><term>near-field scanning optical microscopy</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7320F</term><term>7350G</term><term>7855C</term><term>7866F</term><term>7320D</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Puits quantique semiconducteur</term><term>Etat localisé</term><term>Photoluminescence</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We investigate diffusivity of excess carriers in InGaN multiple quantum wells by near-field optical imaging of photoluminescence profiles created with spatially inhomogeneous photoexcitation, complemented by spatially integrated time-resolved measurements. Nominally similar samples display a wide range of behavior in terms of the impact of localized states under moderate (n∼5×10<sup>17</sup> cm<sup>-3</sup>) electron-hole (e-h) injection. By contrast, in the high density regime where present laser diodes operate (n∼10<sup>19</sup> cm<sup>-3</sup>), radiative recombination is dominated by electronic action within the extended states.© 1999 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>86</s2></fA05><fA06><s2>8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Diffusion and relaxation of excess carriers in InGaN quantum wells in localized versus extended states</s1></fA08><fA11 i1="01" i2="1"><s1>VERTIKOV (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>OZDEN (I.)</s1></fA11><fA11 i1="03" i2="1"><s1>NURMIKKO (A. V.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Division of Engineering, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>4697-4699</s1></fA20><fA21><s1>1999-10-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0439800</s0></fA47><fA60><s1>P</s1><s3>CR</s3></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We investigate diffusivity of excess carriers in InGaN multiple quantum wells by near-field optical imaging of photoluminescence profiles created with spatially inhomogeneous photoexcitation, complemented by spatially integrated time-resolved measurements. Nominally similar samples display a wide range of behavior in terms of the impact of localized states under moderate (n∼5×10<sup>17</sup> cm<sup>-3</sup>) electron-hole (e-h) injection. By contrast, in the high density regime where present laser diodes operate (n∼10<sup>19</sup> cm<sup>-3</sup>), radiative recombination is dominated by electronic action within the extended states.© 1999 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C20F</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C50G</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H55C</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="05" i2="3"><s0>001B70C20D</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7320F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7350G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7320D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Etat localisé</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Localized states</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>near-field scanning optical microscopy</s0><s4>INC</s4></fC03><fN21><s1>277</s1></fN21><fN47 i1="01" i2="1"><s0>9937M000218</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 013A86 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 013A86 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:99-0439800
|texte= Diffusion and relaxation of excess carriers in InGaN quantum wells in localized versus extended states
}}
| This area was generated with Dilib version V0.5.77. |  |